IRF1324
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см. техническую документацию
см. техническую документацию
2 420 ֏
от 2 шт. —
1 980 ֏
от 5 шт. —
1 620 ֏
от 10 шт. —
1 500 ֏
1 шт.
на сумму 2 420 ֏
Альтернативные предложения1
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 24В, 353А, 300Вт, TO220AB Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 195A(Tc) |
| Drain to Source Voltage (Vdss) | 24V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7590pF @ 24V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 300W(Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 195A, 10V |
| Series | HEXFETВ® |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 353 A |
| Maximum Drain Source Resistance | 2 mΩ |
| Maximum Drain Source Voltage | 24 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 300 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220AB |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V |
| Width | 4.83mm |
| Вес, г | 2.91 |
