FMMT591
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см. техническую документацию
см. техническую документацию
484 ֏
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от 5 шт. —
256 ֏
от 10 шт. —
181 ֏
от 100 шт. —
109 ֏
2 шт.
на сумму 968 ֏
Описание
Электроэлемент
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:150MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:100hFE; Transistor Case
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | -80 V |
| Collector- Emitter Voltage VCEO Max | -60 V |
| Collector-Emitter Saturation Voltage | -295 mV |
| Configuration | Single |
| Continuous Collector Current | -1 A |
| DC Collector/Base Gain hfe Min | 300 at 1 mA at 5 V, 300 at 100 mA at 5 V, 250 at 500 mA at 5 V, 160 at 1 A at 5 V, 30 at 2 A at 5 V |
| DC Current Gain hFE Max | 300 at 1 mA at 5 V |
| Emitter- Base Voltage VEBO | -5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 150 MHz |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 0.5 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | FMMT59 |
| Transistor Polarity | PNP |
| Width | 1.4 mm |
| Assembly | SMD |
| Collector current | -1 A |
| Enclosure | SOT-23 |
| Max DC amplification | 300 mA |
| max. operating temperature | 150 °C |
| max.voltage between collector and base Vcbo | -80 V |
| max.voltage between collector and emitter Vceo | -60 V |
| Min DC gain | 100 mA |
| min. operating temperature | -55 °C |
| Power dissipation | 0.5 W |
| Rated current | 2 A |
| Saturation voltage | -350 mV |
| Transit frequency fTmin | 150 MHz |
| Version | PNP |
| Вес, г | 0.2 |
Техническая документация
Datasheet
pdf, 470 КБ
Datasheet FMMT591TA
pdf, 613 КБ
