BSC067N06LS3GATMA1
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1 940 ֏
от 2 шт. —
1 590 ֏
1 шт.
на сумму 1 940 ֏
Описание
Электроэлемент
MOSFET, N CHANNEL, 60V, 50A, 8TDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.0054ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V , RoHS Compliant: Yes
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 15A(Ta), 50A(Tc) |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 30V |
Manufacturer | Infineon Technologies |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | 8-PowerTDFN |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power Dissipation (Max) | 2.5W(Ta), 69W(Tc) |
Rds On (Max) @ Id, Vgs | 6.7mOhm @ 50A, 10V |
Series | OptiMOSв(ў |
Supplier Device Package | PG-TDSON-8-5 |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 2.2V @ 35ВµA |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 7 ns |
Forward Transconductance - Min: | 38 S |
Id - Continuous Drain Current: | 50 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TDSON-8 |
Part # Aliases: | BSC067N06LS3 G SP000451084 |
Pd - Power Dissipation: | 69 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 67 nC |
Rds On - Drain-Source Resistance: | 6.7 mOhms |
Rise Time: | 26 ns |
Series: | OptiMOS 3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | OptiMOS |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 37 ns |
Typical Turn-On Delay Time: | 15 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 50 A |
Maximum Drain Source Resistance | 12.1 mΩ |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2.2V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 69 W |
Minimum Gate Threshold Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Package Type | TDSON |
Pin Count | 8 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 23 nC @ 4.5 V |
Width | 6.35mm |
Вес, г | 0.2 |