IPP110N20N3GXKSA1
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см. техническую документацию
см. техническую документацию
10 300 ֏
от 2 шт. —
9 600 ֏
от 5 шт. —
9 100 ֏
1 шт.
на сумму 10 300 ֏
Описание
Электроэлемент
Описание Транзистор полевой IPP110N20N3GXKSA1 от производителя INFINEON – надежный компонент для силовой электроники. Он имеет монтаж THT, что облегчает его установку на печатные платы. Транзистор способен управлять током стока до 88 А и выдерживает напряжение сток-исток до 200 В. С высокой мощностью в 300 Вт и низким сопротивлением в открытом состоянии всего 0,011 Ом, этот N-MOSFET транзистор идеален для использования в высокопроизводительных схемах. Компактный корпус PG-TO220-3 обеспечивает удобство монтажа и экономию места на плате. Приобретая IPP110N20N3GXKSA1, вы получаете продукт высокого качества для своих проектов. Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | N-MOSFET |
| Монтаж | THT |
| Ток стока, А | 88 |
| Напряжение сток-исток, В | 200 |
| Мощность, Вт | 300 |
| Сопротивление в открытом состоянии, Ом | 0.011 |
| Корпус | PG-TO220-3 |
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 500 |
| Fall Time | 11 ns |
| Forward Transconductance - Min | 71 S |
| Height | 15.65 mm |
| Id - Continuous Drain Current | 88 A |
| Length | 10 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part # Aliases | G IPP110N20N3 IPP110N20N3GXK SP000677892 |
| Pd - Power Dissipation | 300 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 87 nC |
| Rds On - Drain-Source Resistance | 9.9 mOhms |
| Rise Time | 26 ns |
| RoHS | Details |
| Series | XPP110N20 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 41 ns |
| Typical Turn-On Delay Time | 18 ns |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 4.4 mm |
| Base Product Number | IPP110 -> |
| Current - Continuous Drain (Id) @ 25В°C | 88A (Tc) |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 7100pF @ 100V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Power Dissipation (Max) | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 88A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | PG-TO220-3 |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 270ВµA |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 71 S |
| Id - Continuous Drain Current: | 88 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | IPP110N20N3 G SP000677892 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 87 nC |
| Rds On - Drain-Source Resistance: | 9.9 mOhms |
| Rise Time: | 26 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 41 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 88 A |
| Maximum Drain Source Resistance | 11 mΩ |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 300 W |
| Minimum Gate Threshold Voltage | 2V |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Вес, г | 3.184 |
