IRFIBF20G
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см. техническую документацию
см. техническую документацию
2 910 ֏
от 2 шт. —
2 380 ֏
от 5 шт. —
2 050 ֏
от 10 шт. —
1 890 ֏
1 шт.
на сумму 2 910 ֏
Описание
Электроэлемент
N CHANNEL MOSFET, 900V, 1.2A TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:1.2A, Drain Source Voltage Vds:900V, On Resistance Rds(on):8ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Product Range:- , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Lead Shape | Through Hole |
| Tab | Tab |
| Package Height | 16.12(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.63(Max) |
| Mounting | Through Hole |
| PCB changed | 3 |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 900 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 1.2 |
| Maximum Drain Source Resistance (mOhm) | 8000@10V |
| Typical Gate Charge @ Vgs (nC) | 38(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 38(Max) |
| Typical Input Capacitance @ Vds (pF) | 490@25V |
| Maximum Power Dissipation (mW) | 30000 |
| Typical Fall Time (ns) | 32 |
| Typical Rise Time (ns) | 21 |
| Typical Turn-Off Delay Time (ns) | 56 |
| Typical Turn-On Delay Time (ns) | 8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Supplier Package | TO-220FP |
| Standard Package Name | TO-220 |
| Pin Count | 3 |
| Military | No |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 1.2 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 30 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 38 nC |
| Rds On - Drain-Source Resistance: | 8 Ohms |
| Series: | IRFIBF |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Case | TO220FP |
| Drain current | 0.79A |
| Drain-source voltage | 900V |
| Gate charge | 38nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | VISHAY |
| On-state resistance | 8Ω |
| Polarisation | unipolar |
| Power dissipation | 30W |
| Type of transistor | N-MOSFET |
| Вес, г | 2.808 |
Техническая документация
Datasheet
pdf, 1690 КБ
Datasheet IRFIBF20GPBF
pdf, 1681 КБ
Datasheet IRFIBF20GPBF
pdf, 1689 КБ
Документация
pdf, 1686 КБ
