IRLI640G
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см. техническую документацию
см. техническую документацию
3 560 ֏
от 2 шт. —
2 980 ֏
от 5 шт. —
2 640 ֏
от 10 шт. —
2 470 ֏
Добавить в корзину 1 шт.
на сумму 3 560 ֏
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 200В, 9,9А, Idm: 40А, 40Вт, TO220FP Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 9.9A(Tc) |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 40W(Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5.9A, 5V |
| Series | - |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±10V |
| Vgs(th) (Max) @ Id | 2V @ 250ВµA |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| HTS | 8541.29.00.95 |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±10 |
| Maximum Continuous Drain Current (A) | 9.9 |
| Maximum Drain Source Resistance (mOhm) | 180@5V |
| Typical Gate Charge @ Vgs (nC) | 66(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 66(Max) |
| Typical Input Capacitance @ Vds (pF) | 1800@25V |
| Maximum Power Dissipation (mW) | 40000 |
| Typical Fall Time (ns) | 52 |
| Typical Rise Time (ns) | 83 |
| Typical Turn-Off Delay Time (ns) | 44 |
| Typical Turn-On Delay Time (ns) | 8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Pin Count | 3 |
| Supplier Package | TO-220FP |
| Standard Package Name | TO-220 |
| Military | No |
| Mounting | Through Hole |
| Package Height | 16.12(Max) |
| Package Length | 10.63(Max) |
| Package Width | 4.83(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current | 9.9 A |
| Maximum Drain Source Resistance | 180 mΩ |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 40 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-220FP |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V |
| Вес, г | 5 |
