IPP60R099CPXKSA1
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см. техническую документацию
см. техническую документацию
7 500 ֏
от 2 шт. —
6 900 ֏
от 5 шт. —
6 400 ֏
от 10 шт. —
6 100 ֏
1 шт.
на сумму 7 500 ֏
Описание
Электроэлемент
MOSFET, N CHANNEL, 650V, 31A, TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:31A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.09ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, No. of Pins:3, RoHS Compliant: Yes
Технические параметры
Transistor Polarity | N Channel; Continuous Drain Current Id |
Base Product Number | IPP60R099 -> |
Current - Continuous Drain (Id) @ 25В°C | 31A (Tc) |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 100V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 255W (Tc) |
Rds On (Max) @ Id, Vgs | 99mOhm @ 18A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | CoolMOSв„ў -> |
Supplier Device Package | PG-TO220-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
Вес, г | 3.2 |
Техническая документация
Datasheet IPP60R099CPXKSA1
pdf, 571 КБ