IRF7820
![IRF7820](https://static.chipdip.ru/lib/304/DOC005304627.jpg)
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см. техническую документацию
см. техническую документацию
1 940 ֏
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от 4 шт. —
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на сумму 1 940 ֏
Описание
Электроэлемент
MOSFET, N-CH, 200V, 3.7A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0625ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current - (A) | 3.7 |
Maximum Drain Source Resistance - (mOhm) | 78@10V |
Maximum Drain Source Voltage - (V) | 200 |
Maximum Gate Source Voltage - (V) | ??20 |
Maximum Gate Threshold Voltage - (V) | 5 |
Maximum Power Dissipation - (mW) | 2500 |
Military | No |
Number of Elements per Chip | 1 |
Operating Temperature - (??C) | -55~150 |
Packaging | Tape and Reel |
Pin Count | 8 |
Process Technology | HEXFET |
Standard Package Name | SOP |
Supplier Package | SOIC |
Typical Gate Charge @ 10V - (nC) | 29 |
Typical Gate Charge @ Vgs - (nC) | 29@10V |
Typical Input Capacitance @ Vds - (pF) | 1750@100V |
Вес, г | 0.13 |
Техническая документация
irf7820pbf
pdf, 214 КБ