SQM120P06-07L_GE3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
4 540 ֏
1 шт.
на сумму 4 540 ֏
Описание
Электроэлемент
MOSFET, AEC-Q101, P-CH, -60V, -120A, Transistor Polarity:P Channel, Continuous Drain Current Id:-120A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.0056ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2V, Power , RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 120A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 14280pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 375W(Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 30A, 10V |
| Series | TrenchFETВ® |
| Supplier Device Package | TO-263(D2Pak) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 32 ns |
| Forward Transconductance - Min: | 90 S |
| Id - Continuous Drain Current: | 120 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 375 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 180 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 6.7 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 23 ns |
| Series: | SQ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 97 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Application | automotive industry |
| Case | D2PAK, TO263 |
| Drain current | -120A |
| Drain-source voltage | -60V |
| Gate charge | 0.27µC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting | SMD |
| On-state resistance | 13mΩ |
| Polarisation | unipolar |
| Power dissipation | 125W |
| Pulsed drain current | -480A |
| Type of transistor | P-MOSFET |
| Вес, г | 1.743 |
Техническая документация
Datasheet
pdf, 170 КБ
Документация
pdf, 189 КБ
