CSD75207W15, Trans MOSFET P-CH 3.9A 9-Pin DSBGA T/R
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Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand | Texas Instruments |
| Configuration | Dual Common Source Channel |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | -2.4 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | DSBGA-9 |
| Packaging | Reel |
| Product Category | MOSFET |
| Qg - Gate Charge | 2.9 nC |
| Rds On - Drain-Source Resistance | 27 mOhms |
| RoHS | Details |
| Series | CSD75207W15 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | P-Channel |
| Transistor Type | 2 P-Channel |
| Vgs - Gate-Source Voltage | -6 V |
| Vgs th - Gate-Source Threshold Voltage | -800 mV |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 16 ns |
| Forward Transconductance - Min: | 6.2 S |
| Id - Continuous Drain Current: | 3.9 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | DSBGA-9 |
| Pd - Power Dissipation: | 700 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.9 nC |
| Rds On - Drain-Source Resistance: | 54 mOhms |
| Rise Time: | 8.6 ns |
| Series: | CSD75207W15 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Typical Turn-Off Delay Time: | 32.1 ns |
| Typical Turn-On Delay Time: | 12.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Вес, г | 1 |
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