CSD23280F3, Trans MOSFET P-CH 12V 2.9A 3-Pin PicoStar T/R
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Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
Trans MOSFET P-CH 12V 1.8A 3-Pin PicoStar T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 1.8 |
| Maximum Drain Source Resistance (mOhm) | 116 4.5V |
| Maximum Drain Source Voltage (V) | 12 |
| Maximum Gate Source Leakage Current (nA) | 25 |
| Maximum Gate Source Voltage (V) | 6 |
| Maximum Gate Threshold Voltage (V) | 0.95 |
| Maximum IDSS (uA) | 0.05 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Small Signal |
| Supplier Package | PicoStar |
| Typical Fall Time (ns) | 8 |
| Typical Gate Charge @ Vgs (nC) | 0.95 4.5V |
| Typical Input Capacitance @ Vds (pF) | 180 6V |
| Typical Rise Time (ns) | 4 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Typical Turn-On Delay Time (ns) | 8 |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 9000 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 3 S |
| Id - Continuous Drain Current: | 1.8 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PICOSTAR-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 950 pC |
| Rds On - Drain-Source Resistance: | 250 mOhms |
| Rise Time: | 4 ns |
| Series: | CSD23280F3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PicoStar |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 21 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -6 V, +6 V |
| Vgs th - Gate-Source Threshold Voltage: | 950 mV |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1606 КБ
