IR2304SPBF, IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8

Фото 1/3 IR2304SPBF, IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Изображения служат только для ознакомления,
см. техническую документацию
2 290 ֏
от 5 шт.1 810 ֏
от 25 шт.1 380 ֏
1 шт. на сумму 2 290 ֏
Номенклатурный номер: 8002500412

Описание

Semiconductors\Integrated circuits\Analog and mixed integrated circuits\MOSFET/IGBT drivers
Описание IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Характеристики
Категория Микросхема
Тип драйвер
Вид контроллер затвора, high-/low-side switch
Монтаж SMD
Кол-во каналов 2
Мин.напряжение питания, В 10
Макс.напряжение питания, В 20

Технические параметры

Case SO8
Kind of integrated circuit gate driver, high-/low-side
Kind of package tube
Manufacturer INFINEON TECHNOLOGIES
Mounting SMD
Number of channels 2
Operating temperature -40…125°C
Output current -130…60mA
Power 625mW
Topology MOSFET half-bridge
Turn-off time 220ns
Turn-on time 220ns
Type of integrated circuit driver
Voltage class 600V
Brand: Infineon Technologies
Factory Pack Quantity: Factory Pack Quantity: 3800
Fall Time: 170 ns
Features: Independent
Logic Type: CMOS, TTL
Manufacturer: Infineon
Maximum Operating Temperature: +125 C
Maximum Turn-Off Delay Time: 220 ns
Maximum Turn-On Delay Time: 220 ns
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Number of Drivers: 2 Driver
Number of Outputs: 2 Output
Operating Supply Voltage: 5 V to 20 V
Output Current: 130 mA
Package / Case: SOIC-8
Packaging: Tube
Part # Aliases: IR2304SPBF SP001538414
Pd - Power Dissipation: 625 mW
Product Category: Gate Drivers
Product Type: Gate Drivers
Product: IGBT, MOSFET Gate Drivers
Propagation Delay - Max: 330 ns
Rise Time: 300 ns
Subcategory: PMIC-Power Management ICs
Supply Voltage - Max: 20 V
Supply Voltage - Min: 10 V
Technology: Si
Type: Half-Bridge
Вес, г 0.08

Техническая документация

Datasheet
pdf, 136 КБ
Datasheet
pdf, 138 КБ