CSD19533KCS, Транзистор: N-MOSFET, полевой, 100В, 100А, 188Вт, TO220-3
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Описание
Semiconductors\Transistors\Unipolar transistors\N channel transistors
Описание Транзистор: N-MOSFET, полевой, 100В, 100А, 188Вт, TO220-3 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Case | TO220-3 |
Drain current | 100A |
Drain-source voltage | 100V |
Gate charge | 27nC |
Gate-source voltage | ±20V |
Heatsink thickness | 1.14…1.4mm |
Kind of channel | enhanced |
Kind of package | tube |
Manufacturer | TEXAS INSTRUMENTS |
Mounting | THT |
On-state resistance | 8.7mΩ |
Polarisation | unipolar |
Power dissipation | 188W |
Technology | NexFET™ |
Type of transistor | N-MOSFET |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 450 |
Fall Time: | 2 ns |
Forward Transconductance - Min: | 115 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 188 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 27 nC |
Rds On - Drain-Source Resistance: | 10.5 mOhms |
Rise Time: | 5 ns |
Series: | CSD19533KCS |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 12 ns |
Typical Turn-On Delay Time: | 7 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
Вес, г | 1.97 |