IXTH68P20T, Транзистор P-MOSFET, TrenchP™, полевой, -200В, -68А, 568Вт, 245нс
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19 100 ֏
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16 500 ֏
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13 600 ֏
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12 400 ֏
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Описание
Semiconductors\Transistors\Unipolar transistors\P channel transistors
Описание Транзистор P-MOSFET, TrenchP™, полевой, -200В, -68А, 568Вт, 245нс Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Case | TO247-3 |
| Drain current | -68A |
| Drain-source voltage | -200V |
| Gate charge | 380nC |
| Gate-source voltage | ±15V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | THT |
| On-state resistance | 55mΩ |
| Polarisation | unipolar |
| Power dissipation | 568W |
| Reverse recovery time | 245ns |
| Technology | TrenchP™ |
| Type of transistor | P-MOSFET |
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Id - Continuous Drain Current: | 68 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 568 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 380 nC |
| Rds On - Drain-Source Resistance: | 55 mOhms |
| Series: | IXTH68P20 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -15 V, +15 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 6.28 |
