SI4835DDY-T1-E3, Транзистор P-MOSFET, полевой, -30В, -7,7А, 5,6Вт, SO8
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Описание
Описание Транзистор P-MOSFET, полевой, -30В, -7,7А, 5,6Вт, SO8
Технические параметры
Вид монтажа | SMD/SMT |
Другие названия товара № | SI4835DDY-E3 |
Категория продукта | МОП-транзистор |
Коммерческое обозначение | TrenchFET |
Подкатегория | MOSFETs |
Размер фабричной упаковки | 2500 |
Серия | SI4 |
Технология | Si |
Тип продукта | MOSFET |
Торговая марка | Vishay / Siliconix |
Упаковка / блок | SO-8 |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain Triple Source |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 13 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 8.7 |
Maximum Diode Forward Voltage (V) | 1.2 |
Maximum Drain Source Resistance (mOhm) | 18@10V |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Resistance (Ohm) | 2.5 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±25 |
Maximum Gate Threshold Voltage (V) | 3 |
Maximum IDSS (uA) | 1 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 85 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 25 |
Maximum Power Dissipation (mW) | 2500 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
Minimum Gate Resistance (Ohm) | 0.3 |
Minimum Gate Threshold Voltage (V) | 1 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | TrenchFET |
Product Category | Power MOSFET |
Standard Package Name | SO |
Supplier Package | SOIC N |
Typical Diode Forward Voltage (V) | 0.75 |
Typical Fall Time (ns) | 9|15 |
Typical Gate Charge @ 10V (nC) | 43 |
Typical Gate Charge @ Vgs (nC) | 43@10V|22@4.5V |
Typical Gate Plateau Voltage (V) | 3.2 |
Typical Gate to Drain Charge (nC) | 11 |
Typical Gate to Source Charge (nC) | 6 |
Typical Input Capacitance @ Vds (pF) | 1960@15V |
Typical Output Capacitance (pF) | 380 |
Typical Reverse Recovery Charge (nC) | 20 |
Typical Reverse Recovery Time (ns) | 28 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 325@15V |
Typical Rise Time (ns) | 13|100 |
Typical Turn-Off Delay Time (ns) | 32|28 |
Typical Turn-On Delay Time (ns) | 11|44 |
Вес, г | 0.116 |
Техническая документация
Datasheet
pdf, 198 КБ