CSD18535KCS, Транзистор N-MOSFET, полевой, 60В, 200А, 300Вт, TO220-3, NexFET™
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см. техническую документацию
см. техническую документацию
3 830 ֏
от 3 шт. —
3 520 ֏
от 10 шт. —
2 650 ֏
от 50 шт. —
1 960 ֏
1 шт.
на сумму 3 830 ֏
Технические параметры
| Case | TO220-3 |
| Drain current | 200A |
| Drain-source voltage | 60V |
| Gate charge | 63nC |
| Gate-source voltage | ±20V |
| Heatsink thickness | 1.14…1.4mm |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | TEXAS INSTRUMENTS |
| Mounting | THT |
| On-state resistance | 1.6mΩ |
| Polarisation | unipolar |
| Power dissipation | 300W |
| Technology | NexFET™ |
| Type of transistor | N-MOSFET |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Fall Time: | 3 ns |
| Forward Transconductance - Min: | 263 S |
| Id - Continuous Drain Current: | 279 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 63 nC |
| Rds On - Drain-Source Resistance: | 2 mOhms |
| Rise Time: | 3 ns |
| Series: | CSD18535KCS |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Вес, г | 2.023 |
