UJ3C065030B3, Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 47A
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
15 шт., срок 7 недель
53 700 ֏
от 3 шт. —
43 100 ֏
от 10 шт. —
39 100 ֏
1 шт.
на сумму 53 700 ֏
Альтернативные предложения1
Номенклатурный номер: 8002559773
Бренд: Qorvo Inc.
Описание
Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N SMD
High-Performance SiC FETsUnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.
Технические параметры
| Case | D2PAK |
| Drain current | 47A |
| Drain-source voltage | 650V |
| Features of semiconductor devices | ESD protected gate |
| Gate charge | 51nC |
| Gate-source voltage | ±25V |
| Kind of transistor | cascode |
| Manufacturer | Qorvo(UnitedSiC) |
| Mounting | SMD |
| On-state resistance | 27mΩ |
| Polarisation | unipolar |
| Power dissipation | 250W |
| Pulsed drain current | 230A |
| Technology | SiC |
| Type of transistor | N-JFET/N-MOSFET |
| Brand: | Qorvo |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 66 A |
| Manufacturer: | Qorvo |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3 |
| Pd - Power Dissipation: | 250 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 51 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Rise Time: | 19 ns |
| Series: | UJ3C |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Tradename: | SiC FET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 58 ns |
| Typical Turn-On Delay Time: | 32 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 1.66 |
Техническая документация
Datasheet
pdf, 514 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 4 сентября1 | бесплатно |
| HayPost | 8 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
