CSD17576Q5BT, Транзистор: N-MOSFET, полевой, 30В, 100А, 125Вт, VSON-CLIP8, 5x6мм

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2 070 ֏

от 5 шт. — 1 540 ֏

от 25 шт. — 1 140 ֏

от 100 шт. — 910 ֏

1 шт. на сумму 2 070 ֏

Номенклатурный номер: 8002563713

Semiconductors\Transistors\Unipolar transistors\N channel transistors

Описание Транзистор: N-MOSFET, полевой, 30В, 100А, 125Вт, VSON-CLIP8, 5x6мм Характеристики

Case	VSON-CLIP8
Dimensions	5x6mm
Drain current	100A
Drain-source voltage	30V
Gate charge	25nC
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	TEXAS INSTRUMENTS
Mounting	SMD
On-state resistance	2.4mΩ
Polarisation	unipolar
Power dissipation	125W
Technology	NexFET™
Type of transistor	N-MOSFET
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	250
Fall Time:	3 ns
Forward Transconductance - Min:	120 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSON-CLIP-8
Pd - Power Dissipation:	125 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	68 nC
Rds On - Drain-Source Resistance:	2.4 mOhms
REACH - SVHC:	Details
Rise Time:	16 ns
Series:	CSD17576Q5B
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	5 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Вес, г	0.18