IXTH110N25T, Транзистор: N-MOSFET, полевой, 250В, 110А, 694Вт, TO247-3, 170нс
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Описание
Semiconductors\Transistors\Unipolar transistors\N channel transistors
Описание Транзистор: N-MOSFET, полевой, 250В, 110А, 694Вт, TO247-3, 170нс Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Case | TO247-3 |
| Drain current | 110A |
| Drain-source voltage | 250V |
| Features of semiconductor devices | thrench gate power mosfet |
| Gate charge | 157nC |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | THT |
| On-state resistance | 26mΩ |
| Polarisation | unipolar |
| Power dissipation | 694W |
| Reverse recovery time | 170ns |
| Type of transistor | N-MOSFET |
| California Prop 65 | Warning Information |
| Current - Continuous Drain (Id) @ 25В°C | 110A (Tc) |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 157nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 9400pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 694W (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 55A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-247 (IXTH) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Вес, г | 6.27 |
Техническая документация
Datasheet IXTH110N25T
pdf, 200 КБ
