CSD19534KCS, Транзистор: N-MOSFET, полевой, 100В, 100А, 118Вт, TO220-3
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Описание
Описание Транзистор: N-MOSFET, полевой, 100В, 100А, 118Вт, TO220-3 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 1 ns |
| Id - Continuous Drain Current | 54 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 118 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 16.4 nC |
| Rds On - Drain-Source Resistance | 16.3 mOhms |
| Rise Time | 2 ns |
| RoHS | Details |
| Series | CSD19534KCS |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 9 ns |
| Typical Turn-On Delay Time | 6 ns |
| Unit Weight | 0.211644 oz |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.4 V |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 550 |
| Fall Time: | 1 ns |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 118 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 16.4 nC |
| Rds On - Drain-Source Resistance: | 16.5 mOhms |
| Rise Time: | 2 ns |
| Series: | CSD19534KCS |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 9 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.1V |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 20 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 118 W |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 17.1 nC @ 0 V |
| Width | 4.7mm |
| Вес, г | 3.447 |
Техническая документация
Datasheet
pdf, 1680 КБ
Документация
pdf, 350 КБ
