IXFT60N65X2HV, Транзистор: N-MOSFET, X2-Class, полевой, 650В, 60А, 780Вт, TО268
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
15 900 ֏
от 3 шт. —
12 700 ֏
от 10 шт. —
10 200 ֏
Добавить в корзину 1 шт.
на сумму 15 900 ֏
Описание
Semiconductors\Transistors\Unipolar transistors\N channel transistors
Описание Транзистор: N-MOSFET, X2-Class, полевой, 650В, 60А, 780Вт, TО268 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Case | TO268 |
| Drain current | 60A |
| Drain-source voltage | 650V |
| Gate charge | 108nC |
| Gate-source voltage | ±30V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | SMD |
| On-state resistance | 52mΩ |
| Polarisation | unipolar |
| Power dissipation | 780W |
| Reverse recovery time | 180ns |
| Technology | HiPerFET™, X2-Class |
| Type of transistor | N-MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.4V |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Resistance | 52 mΩ |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 780 W |
| Minimum Gate Threshold Voltage | 3.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TO-268HV |
| Pin Count | 3 |
| Series | HiperFET |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 108 nC @ 10 V |
| Width | 15.15mm |
| Вес, г | 3.9 |
