BSZ097N04LSGATMA1, Транзистор N-МОП, полевой, 40В, 40А, 35Вт, PG-TSDSON-8
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см. техническую документацию
1 240 ֏
от 5 шт. —
660 ֏
от 25 шт. —
550 ֏
от 100 шт. —
414 ֏
1 шт.
на сумму 1 240 ֏
Описание
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.
Технические параметры
| Case | PG-TSDSON-8 |
| Drain current | 40A |
| Drain-source voltage | 40V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Manufacturer | INFINEON TECHNOLOGIES |
| Mounting | SMD |
| On-state resistance | 9.7mΩ |
| Polarisation | unipolar |
| Power dissipation | 35W |
| Technology | OptiMOS™ 3 |
| Type of transistor | N-MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Resistance | 14.2 mΩ |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 35 W |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TSDSON |
| Pin Count | 8 |
| Series | OptiMOS 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Width | 3.4mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 2.8 ns |
| Forward Transconductance - Min: | 24 S |
| Id - Continuous Drain Current: | 40 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TSDSON-8 |
| Part # Aliases: | BSZ097N04LS G SP000388296 |
| Pd - Power Dissipation: | 35 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 24 nC |
| Rds On - Drain-Source Resistance: | 8.1 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 2.4 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 16 ns |
| Typical Turn-On Delay Time: | 3.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.07 |
