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UF3C065080K4S, Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A

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см. техническую документацию

4 шт., срок 7 недель

30 600 ֏

от 3 шт. — 25 000 ֏

1 шт. на сумму 30 600 ֏

Альтернативные предложения1

Номенклатурный номер: 8002670840

Бренд: Qorvo Inc.

Описание

Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N THT

UF3C SiC FETs

UnitedSiC / Qorvo UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The UnitedSiC / Qorvo UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D 2 PAK-3, D 2 PAK-7, D 2 PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

Технические параметры

Brand:	Qorvo/UnitedSiC
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	30
Fall Time:	8 ns
Id - Continuous Drain Current:	31 A
Manufacturer:	Qorvo
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-4
Packaging:	Tube
Pd - Power Dissipation:	190 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	51 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	100 mOhms
Rise Time:	20 ns
Series:	UF3C
Subcategory:	MOSFETs
Technology:	SiC
Tradename:	SiC FET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	21 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	7