HN4C51J(TE85L.F)

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1 шт. с центрального склада, срок 3 недели

1 060 ֏

1 шт. на сумму 1 060 ֏

Альтернативные предложения1

Номенклатурный номер: 8002690348

Бренд: Toshiba

Электроэлемент

Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A

Brand	Toshiba
Collector- Base Voltage VCBO	120 V
Collector- Emitter Voltage VCEO Max	120 V
Collector-Emitter Saturation Voltage	0.3 V
Configuration	Dual
Continuous Collector Current	100 mA
DC Collector/Base Gain hfe Min	200
DC Current Gain hFE Max	700
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	3000
Gain Bandwidth Product fT	100 MHz
Manufacturer	Toshiba
Maximum DC Collector Current	100 mA
Mounting Style	SMD/SMT
Package / Case	SOT-25-5
Packaging	Cut Tape
Pd - Power Dissipation	300 mW
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	HN4C51
Transistor Polarity	NPN
Unit Weight	0.000494 oz
Brand:	Toshiba
Collector- Base Voltage VCBO:	120 V
Collector- Emitter Voltage VCEO Max:	120 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Dual
Continuous Collector Current:	100 mA
DC Collector/Base Gain hFE Min:	200
DC Current Gain hFE Max:	700
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-25-5
Pd - Power Dissipation:	300 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.014