IPZ40N04S5L7R4ATMA1
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см. техническую документацию
см. техническую документацию
1 900 ֏
от 2 шт. —
1 460 ֏
от 4 шт. —
1 210 ֏
1 шт.
на сумму 1 900 ֏
Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 40V, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 40A(Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 25V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | 8-PowerVDFN |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 34W(Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 20A, 10V |
| Supplier Device Package | PG-TSDSON-8 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±16V |
| Vgs(th) (Max) @ Id | 2V @ 10ВµA |
| Channel Type | N |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Voltage | 16 V |
| Package Type | SuperSO8 5x6 |
| Pin Count | 8 |
| Вес, г | 0.1 |
Техническая документация
Datasheet IPZ40N04S5L7R4ATMA1
pdf, 325 КБ
