IPT007N06N
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
7 200 ֏
от 2 шт. —
6 600 ֏
от 5 шт. —
6 200 ֏
1 шт.
на сумму 7 200 ֏
Описание
Электроэлемент
60V 300A 375W 0.75mOhm@10V,150A 3.3V@260uA N Channel HSOF-8-1 MOSFETs ROHS
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 2000 |
| Fall Time | 22 ns |
| Forward Transconductance - Min | 160 S |
| Height | 2.4 mm |
| Id - Continuous Drain Current | 300 A |
| Length | 10.58 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | HSOF-8 |
| Packaging | Reel |
| Part # Aliases | IPT007N06NATMA1 SP001100158 |
| Pd - Power Dissipation | 375 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 287 nC |
| Rds On - Drain-Source Resistance | 660 uOhms |
| Rise Time | 18 ns |
| RoHS | Details |
| Series | XPT007N06 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 76 ns |
| Typical Turn-On Delay Time | 38 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Width | 10.1 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 22 ns |
| Forward Transconductance - Min: | 160 S |
| Id - Continuous Drain Current: | 300 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | HSOF-8 |
| Part # Aliases: | SP001100158 IPT007N06NATMA1 |
| Pd - Power Dissipation: | 375 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 216 nC |
| Rds On - Drain-Source Resistance: | 750 uOhms |
| Rise Time: | 18 ns |
| Series: | OptiMOS 5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 76 ns |
| Typical Turn-On Delay Time: | 38 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Вес, г | 0.9268 |
Техническая документация
Datasheet
pdf, 627 КБ
