IPP60R600P7XKSA1
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см. техническую документацию
см. техническую документацию
2 690 ֏
от 2 шт. —
2 200 ֏
от 5 шт. —
1 870 ֏
от 10 шт. —
1 730 ֏
1 шт.
на сумму 2 690 ֏
Описание
Электроэлемент
MOSFET, N-CH, 600V, 6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.49ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 6 |
| Maximum Drain Source Resistance - (mOhm) | 600@10V |
| Maximum Drain Source Voltage - (V) | 600 |
| Maximum Gate Source Voltage - (V) | 20 |
| Maximum Gate Threshold Voltage - (V) | 4 |
| Maximum Power Dissipation - (mW) | 30000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tube |
| Pin Count | 3 |
| Process Technology | CoolMOS P7 |
| Supplier Package | TO-220 |
| Typical Gate Charge @ 10V - (nC) | 9 |
| Typical Gate Charge @ Vgs - (nC) | 9@10V |
| Typical Input Capacitance @ Vds - (pF) | 363@400V |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Resistance | 0.6 Ω |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Threshold Voltage | 4V |
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Series | CoolMOS™ P7 |
| Transistor Material | Si |
| Вес, г | 2.814 |
Техническая документация
Datasheet IPP60R600P7XKSA1
pdf, 1621 КБ
