IPAW60R360P7SXKSA1
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 850 ֏
от 2 шт. —
1 410 ֏
от 5 шт. —
1 100 ֏
от 10 шт. —
1 010 ֏
1 шт.
на сумму 1 850 ֏
Описание
Электроэлемент
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FP Tube
Технические параметры
| Brand | Infineon Technologies |
| Factory Pack Quantity | 450 |
| Manufacturer | Infineon |
| Part # Aliases | IPAW60R360P7S |
| Product Category | MOSFET |
| RoHS | Details |
| Series | CoolMOS P7 |
| Tradename | CoolMOS |
| Base Product Number | IPAW60 -> |
| Current - Continuous Drain (Id) @ 25В°C | 9A (Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 555pF @ 400V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 22W (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.7A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | PG-TO220 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4V @ 140ВµA |
| Channel Type | N |
| Maximum Continuous Drain Current | 9 A |
| Maximum Drain Source Resistance | 0.36 Ω |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Threshold Voltage | 4V |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 FP |
| Pin Count | 3 |
| Transistor Material | Si |
| Вес, г | 2.679 |
Техническая документация
Datasheet IPAW60R360P7SXKSA1
pdf, 1094 КБ
