SSM3K376R.LF

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405 шт. с центрального склада, срок 2-3 недели

630 ֏

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Добавить в корзину 2 шт. на сумму 1 260 ֏

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Номенклатурный номер: 8002938487

Бренд: Toshiba

Электроэлемент

Trans MOSFET N-CH 30V 4A 3-Pin SOT-23F - Tape and Reel (Alt: SSM3K376R,LF)

Current - Continuous Drain (Id) @ 25В°C	4A(Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 10V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Operating Temperature	150В°C
Package / Case	SOT-23-3 Flat Leads
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	2W(Ta)
Rds On (Max) @ Id, Vgs	56 mOhm @ 2A, 4.5V
Series	U-MOSVII-H
Supplier Device Package	SOT-23F
Technology	MOSFET(Metal Oxide)
Vgs (Max)	+12V, -8V
Vgs(th) (Max) @ Id	1V @ 1mA
Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Forward Transconductance - Min:	10.5 S
Id - Continuous Drain Current:	4 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-23F-3
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	1 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	2.2 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	56 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	9.5 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-8 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.011