IPB60R060C7ATMA1
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см. техническую документацию
см. техническую документацию
10 700 ֏
от 2 шт. —
9 900 ֏
от 5 шт. —
9 400 ֏
от 8 шт. —
9 100 ֏
Добавить в корзину 1 шт.
на сумму 10 700 ֏
Описание
Электроэлемент
MOSFET, N-CH, 600V, 35A, 162W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 35A(Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850pF @ 400V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-263-4, DВІPak(3 Leads+Tab), TO-263AA |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 162W(Tc) |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 15.9A, 10V |
| Series | CoolMOSв(ў C7 |
| Supplier Device Package | PG-TO263-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 800ВµA |
| Channel Type | N |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 650 V |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 4 ns |
| Id - Continuous Drain Current: | 35 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Part # Aliases: | IPB60R060C7 SP001385008 |
| Pd - Power Dissipation: | 162 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 68 nC |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Rise Time: | 11 ns |
| Series: | CoolMOS C7 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | CoolMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 28 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |
| Вес, г | 1.744 |
Техническая документация
Datasheet IPB60R060C7ATMA1
pdf, 1393 КБ
