CSD18563Q5A
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см. техническую документацию
см. техническую документацию
4 100 ֏
от 2 шт. —
3 570 ֏
от 5 шт. —
3 230 ֏
1 шт.
на сумму 4 100 ֏
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Описание
Электроэлемент
MOSFET, N-CHANNEL, 60V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.2W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 250 |
| Fall Time | 1.7 ns |
| Forward Transconductance - Min | 60 S |
| Id - Continuous Drain Current | 91 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-FET-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 3.2 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 15 nC |
| Rds On - Drain-Source Resistance | 5.7 mOhms |
| Rise Time | 6.3 ns |
| RoHS | Details |
| Series | CSD18563Q5A |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | NexFET Power MOSFET |
| Typical Turn-Off Delay Time | 11.4 ns |
| Typical Turn-On Delay Time | 3.2 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 1.7 ns |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 116 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | Power MOSFETs |
| Qg - Gate Charge: | 15 nC |
| Rds On - Drain-Source Resistance: | 6.8 mOhms |
| Rise Time: | 6.3 ns |
| Series: | CSD18563Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Type: | 60 V N-Channel NexFET Power MOSFETs |
| Typical Turn-Off Delay Time: | 11.4 ns |
| Typical Turn-On Delay Time: | 3.2 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |
| Вес, г | 1 |
Техническая документация
Datasheet CSD18563Q5AT
pdf, 850 КБ
