CSD16321Q5
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см. техническую документацию
см. техническую документацию
2 290 ֏
от 2 шт. —
1 850 ֏
от 5 шт. —
1 530 ֏
от 10 шт. —
1 410 ֏
1 шт.
на сумму 2 290 ֏
Описание
Электроэлемент
MOSFET, N CH, 25V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Po
Технические параметры
| RoHS Compliant | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 3.8 mΩ |
| Maximum Drain Source Voltage | 25 V |
| Maximum Gate Source Voltage | -8 V, +10 V |
| Maximum Gate Threshold Voltage | 1.4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3.1 W |
| Minimum Gate Threshold Voltage | 0.9V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | VSON-CLIP |
| Pin Count | 8 |
| Series | NexFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 14 nC @ 4.5 V |
| Width | 5.1mm |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Development Kit: | TPS51218EVM-49, TPS40304EVM-353 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 17 ns |
| Forward Transconductance - Min: | 150 S |
| Id - Continuous Drain Current: | 5 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 113 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 14 nC |
| Rds On - Drain-Source Resistance: | 2.4 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 15 ns |
| Series: | CSD16321Q5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Вес, г | 0.26 |
Техническая документация
Datasheet
pdf, 1680 КБ
Документация
pdf, 532 КБ
