CSD16406Q3
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см. техническую документацию
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550 ֏
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Описание
Электроэлемент
FET, N CH, SINGLE, 25V, 8SON; PolaritГ© transistor:Canal N; Courant de drain Id:60A; Tension Vds max..:25V; RГ©sistanceВ Rds(on):0.0042ohm; Tension, mesure Rds:4.5V; Tension de seuil Vgs:1.7V; Dissipation de puissance Pd:2.
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 4.8 ns |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 46 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 5.8 nC |
| Rds On - Drain-Source Resistance: | 5.3 mOhms |
| Rise Time: | 12.9 ns |
| Series: | CSD16406Q3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 8.5 ns |
| Typical Turn-On Delay Time: | 7.3 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -12 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Вес, г | 0.1 |
Техническая документация
Datasheet CSD16406Q3
pdf, 409 КБ
