CSD25402Q3A
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см. техническую документацию
см. техническую документацию
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от 10 шт. —
530 ֏
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2 шт.
на сумму 1 420 ֏
Описание
Электроэлемент
Описание Транзистор МОП силовой, Транзистор P-МОП, полевой, 20 В 72 А 2.8 Вт, VSON8
Технические параметры
Brand | Texas Instruments |
Channel Mode | Enhancement |
Configuration | Single Channel |
Factory Pack Quantity | 2500 |
Fall Time | 12 ns |
Forward Transconductance - Min | 59 S |
Height | 0.9 mm |
Id - Continuous Drain Current | -15 A |
Length | 3.15 mm |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +125 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | VSONP-8 |
Packaging | Reel |
Pd - Power Dissipation | 2.8 W |
Product Category | MOSFET |
Qg - Gate Charge | 7.5 nC |
Rds On - Drain-Source Resistance | 8.9 mOhm |
Rise Time | 7 ns |
RoHS | Details |
Series | CSD25402Q3A |
Technology | Si |
Tradename | NexFET |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 10 ns |
Vds - Drain-Source Breakdown Voltage | -20 V |
Vgs - Gate-Source Voltage | -12 V |
Vgs th - Gate-Source Threshold Voltage | -900 mV |
Width | 3 mm |
Continuous Drain Current (Id) @ 25В°C | 76A |
Power Dissipation-Max (Ta=25В°C) | 2.8W |
Channel Type | P |
Maximum Continuous Drain Current | 76 A |
Maximum Drain Source Resistance | 8900000 Ω |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Threshold Voltage | 0.65V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | VSONP |
Pin Count | 8 |
Transistor Material | Si |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 12 ns |
Id - Continuous Drain Current: | 76 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +125 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSONP-8 |
Pd - Power Dissipation: | 69 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 7.5 nC |
Rds On - Drain-Source Resistance: | 8.9 mOhms |
Rise Time: | 7 ns |
Series: | CSD25402Q3A |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 25 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 650 mV |
Вес, г | 0.06 |
Техническая документация
Datasheet CSD25402Q3A
pdf, 1061 КБ
Datasheet CSD25402Q3A
pdf, 908 КБ