CSD17577Q5A
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см. техническую документацию
см. техническую документацию
1 370 ֏
от 2 шт. —
1 020 ֏
от 10 шт. —
810 ֏
1 шт.
на сумму 1 370 ֏
Описание
Электроэлемент
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm 8-VSONP -55 to 150
Технические параметры
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 250 |
| Fall Time | 2 ns |
| Height | 1 mm |
| Id - Continuous Drain Current | 60 A |
| Length | 6 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSONP-8 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 53 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 27 nC |
| Rds On - Drain-Source Resistance | 4.8 mOhm |
| Rise Time | 12 ns |
| RoHS | Details |
| Series | CSD17577Q5 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 18 ns |
| Typical Turn-On Delay Time | 3 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.4 V |
| Width | 4.9 mm |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 79 S |
| Id - Continuous Drain Current: | 83 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 53 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 27 nC |
| Rds On - Drain-Source Resistance: | 4.2 mOhms |
| Rise Time: | 12 ns |
| Series: | CSD17577Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 18 ns |
| Typical Turn-On Delay Time: | 3 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Вес, г | 0.34 |
Техническая документация
Datasheet
pdf, 397 КБ
