CSD16570Q5B

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2 820 ֏

от 2 шт. — 2 560 ֏

1 шт. на сумму 2 820 ֏

Номенклатурный номер: 8002948004

Электроэлемент

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm 8-VSON-CLIP -55 to 150

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	100
Maximum Drain Source Resistance - (mOhm)	590@10V
Maximum Drain Source Voltage - (V)	25
Maximum Gate Source Voltage - (V)	??20
Maximum Gate Threshold Voltage - (V)	1.9
Maximum Power Dissipation - (mW)	3200
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	8
Process Technology	NexFET
Standard Package Name	SON
Supplier Package	VSON-CLIP EP
Typical Gate Charge @ 10V - (nC)	192
Typical Gate Charge @ Vgs - (nC)	95@4.5VI192@10V
Typical Input Capacitance @ Vds - (pF)	10700@12V
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	72 ns
Forward Transconductance - Min:	278 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSON-CLIP-8
Pd - Power Dissipation:	195 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	192 nC
Rds On - Drain-Source Resistance:	590 uOhms
Rise Time:	43 ns
Series:	CSD16570Q5B
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	156 ns
Typical Turn-On Delay Time:	5 ns
Vds - Drain-Source Breakdown Voltage:	25 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Вес, г	0.076