CSD16411Q3
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см. техническую документацию
см. техническую документацию
1 540 ֏
от 2 шт. —
1 280 ֏
1 шт.
на сумму 1 540 ֏
Описание
Электроэлемент
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 15 mOhm
Технические параметры
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 3.1 ns |
| Forward Transconductance - Min | 30 S |
| Height | 1 mm |
| Id - Continuous Drain Current | 60 A |
| Length | 3.3 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-Clip-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 2.7 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 2.9 nC |
| Rds On - Drain-Source Resistance | 15 mOhms |
| Rise Time | 7.8 ns |
| RoHS | Details |
| Series | CSD16411Q3 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 6 ns |
| Typical Turn-On Delay Time | 5.3 ns |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Vgs - Gate-Source Voltage | 16 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 3.3 mm |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Development Kit: | TPS2592AAEVM-531, TPS2592BLEVM-531 |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 3.1 ns |
| Forward Transconductance - Min: | 30 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 35 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.9 nC |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Rise Time: | 7.8 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 6 ns |
| Typical Turn-On Delay Time: | 5.3 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -12 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |
| Вес, г | 0.04 |
Техническая документация
Datasheet CSD16411Q3
pdf, 572 КБ
Datasheet CSD16411Q3
pdf, 542 КБ
