CSD16301Q2
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
580 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
344 ֏
от 10 шт. —
291 ֏
от 100 шт. —
239 ֏
2 шт.
на сумму 1 160 ֏
Описание
Электроэлемент
MOSFET,N CH,25V,5A,SON-6; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:2.3W; Transistor Case Style:SON; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Current Id Max:5A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:10V
Технические параметры
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 1.7 ns |
| Forward Transconductance - Min | 16.5 S |
| Height | 0.75 mm |
| Id - Continuous Drain Current | 22 A |
| Length | 2 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | WSON-FET-6 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 2.3 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 2 nC |
| Rds On - Drain-Source Resistance | 29 mOhms |
| Rise Time | 4.4 ns |
| RoHS | Details |
| Series | CSD16301Q2 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 4.1 ns |
| Typical Turn-On Delay Time | 2.7 ns |
| Unit Weight | 0.000307 oz |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Width | 2 mm |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 5 A |
| Maximum Drain Source Resistance | 34 mΩ |
| Maximum Drain Source Voltage | 25 V |
| Maximum Gate Source Voltage | -8 V, +10 V |
| Maximum Gate Threshold Voltage | 1.55V |
| Maximum Power Dissipation | 2.3 W |
| Minimum Gate Threshold Voltage | 0.9V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | WSON |
| Pin Count | 6 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 2 nC @ 4.5 V |
| Continuous Drain Current (Id) | 5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 24mΩ@8V, 4A |
| Drain Source Voltage (Vdss) | 25V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.55V@250uA |
| Input Capacitance (Ciss@Vds) | 340pF@12.5V |
| Power Dissipation (Pd) | 2.3W |
| Total Gate Charge (Qg@Vgs) | 2.8nC@4.5V |
| Type | 1PCSNChannel |
| Вес, г | 0.074 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet CSD16322Q5
pdf, 466 КБ
