CSD18543Q3A
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930 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
710 ֏
от 10 шт. —
570 ֏
2 шт.
на сумму 1 860 ֏
Описание
Электроэлемент
Описание Транзистор MOSFET DFN8
Технические параметры
Brand | Texas Instruments |
Channel Mode | Enhancement |
Configuration | 1 N-Channel |
Factory Pack Quantity | 2500 |
Fall Time | 4 ns |
Forward Transconductance - Min | 40 S |
Height | 0.9 mm |
Id - Continuous Drain Current | 60 A |
Length | 3.15 mm |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | VSONP-8 |
Packaging | Reel |
Pd - Power Dissipation | 66 W |
Product Category | MOSFET |
Qg - Gate Charge | 14.5 nC |
Rds On - Drain-Source Resistance | 8.1 mOhms |
Rise Time | 18 ns |
RoHS | Details |
Series | CSD18543Q3A |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 8 ns |
Typical Turn-On Delay Time | 9 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Width | 3 mm |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 4 ns |
Forward Transconductance - Min: | 40 S |
Id - Continuous Drain Current: | 12 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSONP-8 |
Pd - Power Dissipation: | 66 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 11.1 nC |
Rds On - Drain-Source Resistance: | 12 mOhms |
Rise Time: | 18 ns |
Series: | CSD18543Q3A |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 8 ns |
Typical Turn-On Delay Time: | 9 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Channel Type | N |
Maximum Continuous Drain Current | 12 A |
Maximum Drain Source Resistance | 1.2e+006 Ω |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Threshold Voltage | 1.5V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | VSONP |
Pin Count | 8 |
Transistor Material | Si |
Вес, г | 0.2 |
Техническая документация
Datasheet CSD18543Q3AT
pdf, 433 КБ