CSD18510Q5B
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см. техническую документацию
см. техническую документацию
6 500 ֏
от 2 шт. —
5 900 ֏
от 5 шт. —
5 500 ֏
от 10 шт. —
5 200 ֏
1 шт.
на сумму 6 500 ֏
Описание
Электроэлемент
MOSFET, N-CH, 40V, 100A, VSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):790ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power
Технические параметры
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 2500 |
| Fall Time | 15 ns |
| Forward Transconductance - Min | 147 S |
| Id - Continuous Drain Current | 200 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SON-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 156 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 153 nC |
| Rds On - Drain-Source Resistance | 1.6 mOhm |
| Rise Time | 17 ns |
| RoHS | Details |
| Series | CSD18510Q5B |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 44 ns |
| Typical Turn-On Delay Time | 8 ns |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 15 ns |
| Forward Transconductance - Min: | 147 S |
| Id - Continuous Drain Current: | 200 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 156 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 153 nC |
| Rds On - Drain-Source Resistance: | 1.2 mOhms |
| Rise Time: | 17 ns |
| Series: | CSD18510Q5B |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 44 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.14 |
Техническая документация
Документация
pdf, 593 КБ
