CSD17303Q5
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см. техническую документацию
см. техническую документацию
2 380 ֏
от 2 шт. —
1 940 ֏
от 5 шт. —
1 620 ֏
от 10 шт. —
1 500 ֏
1 шт.
на сумму 2 380 ֏
Описание
Электроэлемент
POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 30V, 0.0037OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 32A |
| Drain-Source On-Volt | 30V |
| Gate-Source Voltage (Max) | 10V |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | SON |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Polarity | N |
| Power Dissipation | 3.2W |
| Type | Power MOSFET |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 10.4 ns |
| Forward Transconductance - Min: | 114 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 3.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Rds On - Drain-Source Resistance: | 2.4 mOhms |
| Rise Time: | 16 ns |
| Series: | CSD17303Q5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 11.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Вес, г | 0.25 |
