CSD17551Q3A
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см. техническую документацию
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970 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
710 ֏
от 10 шт. —
580 ֏
2 шт.
на сумму 1 940 ֏
Описание
Электроэлемент
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm
Технические параметры
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 3.4 ns |
| Forward Transconductance - Min | 101 S |
| Height | 0.9 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 3.15 mm |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSONP-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 2.6 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 6 nC |
| Rds On - Drain-Source Resistance | 11.8 mOhms |
| Rise Time | 24 ns |
| RoHS | Details |
| Series | CSD17551Q3A |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 12 ns |
| Typical Turn-On Delay Time | 8 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Width | 3 mm |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 3.4 ns |
| Forward Transconductance - Min: | 101 S |
| Id - Continuous Drain Current: | 48 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 2.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6 nC |
| Rds On - Drain-Source Resistance: | 9 mOhms |
| Rise Time: | 24 ns |
| Series: | CSD17551Q3A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 12 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Вес, г | 0.13 |
Техническая документация
Документация
pdf, 837 КБ
