IPD50P04P4L11ATMA1
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см. техническую документацию
см. техническую документацию
1 940 ֏
от 2 шт. —
1 540 ֏
от 5 шт. —
1 210 ֏
от 10 шт. —
1 110 ֏
1 шт.
на сумму 1 940 ֏
Описание
Электроэлемент
MOSFET, P CH, -40V, -50A, TO-252-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-50A, Drain Source Voltage Vds:-40V, On Resistance Rds(on):0.0082ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-1.7V, Power , RoHS Compliant: Yes
Технические параметры
| AEC Qualified Number | AEC-Q101 |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current - (A) | 50 |
| Maximum Drain Source Resistance - (mOhm) | 10.6@10V |
| Maximum Drain Source Voltage - (V) | 40 |
| Maximum Gate Source Voltage - (V) | ??16 |
| Maximum Power Dissipation - (mW) | 58000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Process Technology | Single |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Typical Gate Charge @ 10V - (nC) | 45 |
| Typical Gate Charge @ Vgs - (nC) | 45@10V |
| Typical Input Capacitance @ Vds - (pF) | 3000@25V |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 39 ns |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IPD50P04P4L-11 SP000671156 |
| Pd - Power Dissipation: | 58 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 45 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 17.2 mOhms |
| Rise Time: | 9 ns |
| Series: | XPD50P04 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 46 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -16 V, +5 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.3 |
Техническая документация
Datasheet IPD50P04P4L11ATMA1
pdf, 389 КБ
Документация
pdf, 457 КБ
