CY7C1011DV33-10ZSXI
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
5 700 ֏
Добавить в корзину 1 шт.
на сумму 5 700 ֏
Описание
Электроэлемент
SRAM, 2MBIT, 128KX16BIT, 10NS, TSOPII-44; Memory Size:2Mbit; SRAM Memory Configuration:128K x 16bit; Supply Voltage Range:3V to 3.6V; Memory Case Style:TSOP-II; No. of Pins:44Pins; Access Time:10ns; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; RoHS Phthalates Compliant:Yes; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017)
Технические параметры
Memory Size | 2Mbit; SRAM Memory Configuration |
Access Time: | 10 ns |
Brand: | Infineon Technologies |
Factory Pack Quantity: | 675 |
Interface Type: | Parallel |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +85 C |
Memory Size: | 2 Mbit |
Memory Type: | SDR |
Minimum Operating Temperature: | -40 C |
Moisture Sensitive: | Yes |
Mounting Style: | SMD/SMT |
Number of Ports: | 1 |
Organisation: | 128 k x 16 |
Package/Case: | TSOP-44 |
Packaging: | Tray |
Product Category: | SRAM |
Product Type: | SRAM |
Subcategory: | Memory & Data Storage |
Supply Current - Max: | 90 mA |
Supply Voltage - Max: | 3.6 V |
Supply Voltage - Min: | 3 V |
Type: | Asynchronous |
Вес, г | 4 |