CSD16340Q3
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см. техническую документацию
см. техническую документацию
2 420 ֏
от 2 шт. —
2 290 ֏
от 5 шт. —
1 980 ֏
от 10 шт. —
1 840 ֏
1 шт.
на сумму 2 420 ֏
Описание
Электроэлемент
POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 25V, 0.0078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Технические параметры
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 5.2 ns |
| Forward Transconductance - Min | 121 S |
| Id - Continuous Drain Current | 21 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-Clip-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 3 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 6.5 nC |
| Rds On - Drain-Source Resistance | 4.3 mOhms |
| Rise Time | 16.1 ns |
| RoHS | Details |
| Series | CSD16340Q3 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 13.8 ns |
| Typical Turn-On Delay Time | 4.8 ns |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs th - Gate-Source Threshold Voltage | 850 mV |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 5.2 ns |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6.5 nC |
| Rds On - Drain-Source Resistance: | 4.5 mOhms |
| Rise Time: | 16.1 ns |
| Series: | CSD16340Q3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 13.8 ns |
| Typical Turn-On Delay Time: | 4.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -8 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Вес, г | 0.1 |
Техническая документация
Документация
pdf, 305 КБ
