BSC070N10NS3G
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см. техническую документацию
см. техническую документацию
2 540 ֏
от 2 шт. —
2 270 ֏
от 10 шт. —
2 000 ֏
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Описание
Электроэлемент
POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 100V, 0.007OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 36 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 90 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Cut Tape |
| Part # Aliases | BSC070N10NS3GATMA1 BSC070N10NS3GXT SP000778082 |
| Pd - Power Dissipation | 114 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 55 nC |
| Rds On - Drain-Source Resistance | 6.3 mOhms |
| Rise Time | 10 ns |
| RoHS | Details |
| Series | OptiMOS 3 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 29 ns |
| Typical Turn-On Delay Time | 15 ns |
| Unit Weight | 0.003527 oz |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 36 S |
| Id - Continuous Drain Current: | 90 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TDSON-8 |
| Part # Aliases: | SP000778082 BSC7N1NS3GXT BSC070N10NS3GATMA1 |
| Pd - Power Dissipation: | 114 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 55 nC |
| Rds On - Drain-Source Resistance: | 6.3 mOhms |
| Rise Time: | 10 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 29 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.2 |
Техническая документация
Datasheet
pdf, 1632 КБ
