CSD75207W15

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см. техническую документацию

800 ֏

Мин. кол-во для заказа 2 шт.

от 5 шт. — 580 ֏

от 10 шт. — 454 ֏

2 шт. на сумму 1 600 ֏

Номенклатурный номер: 8003040976

Электроэлемент

-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1.5 mm x 1.5 mm, 27 mOhm, gate ESD pro

Brand	Texas Instruments
Configuration	Dual Common Source Channel
Factory Pack Quantity	3000
Id - Continuous Drain Current	-2.4 A
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	2 Channel
Package / Case	DSBGA-9
Packaging	Reel
Product Category	MOSFET
Qg - Gate Charge	2.9 nC
Rds On - Drain-Source Resistance	27 mOhms
RoHS	Details
Series	CSD75207W15
Technology	Si
Tradename	NexFET
Transistor Polarity	P-Channel
Transistor Type	2 P-Channel
Vgs - Gate-Source Voltage	-6 V
Vgs th - Gate-Source Threshold Voltage	-800 mV
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	16 ns
Forward Transconductance - Min:	6.2 S
Id - Continuous Drain Current:	3.9 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	DSBGA-9
Pd - Power Dissipation:	700 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	2.9 nC
Rds On - Drain-Source Resistance:	54 mOhms
Rise Time:	8.6 ns
Series:	CSD75207W15
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	P-Channel
Transistor Type:	2 P-Channel
Typical Turn-Off Delay Time:	32.1 ns
Typical Turn-On Delay Time:	12.8 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Вес, г	0.0025