IPA60R160P7XKSA1
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см. техническую документацию
см. техническую документацию
4 450 ֏
от 2 шт. —
3 880 ֏
от 5 шт. —
3 480 ֏
1 шт.
на сумму 4 450 ֏
Описание
Электроэлемент
Mosfet, N-Ch, 600V, 20A, 150Deg C, 26W Rohs Compliant: Yes |Infineon IPA60R160P7XKSA1
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 20(A) |
| Drain-Source On-Volt | 600(V) |
| Gate-Source Voltage (Max) | 20(V) |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Packaging | Rail/Tube |
| Polarity | N |
| Power Dissipation | 26(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 5.8 ns |
| Id - Continuous Drain Current: | 23.8 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | IPA60R160P7 SP001866014 |
| Pd - Power Dissipation: | 26 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 44 nC |
| Rds On - Drain-Source Resistance: | 374 mOhms |
| Rise Time: | 7.6 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 12.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Resistance | 160 mΩ |
| Maximum Drain Source Voltage | 1200 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 FP |
| Pin Count | 3 |
| Series | IPA60R |
| Transistor Material | Si |
| Drain Source On State Resistance | 0.12Ом |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | CoolMOS P7 |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Through Hole |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 600В |
| Непрерывный Ток Стока | 20А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 3.5В |
| Рассеиваемая Мощность | 26Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.12Ом |
| Стиль Корпуса Транзистора | TO-220FP |
| Вес, г | 3.333 |
