IRF820A
![Фото 1/7 IRF820A](https://static.chipdip.ru/lib/192/DOC036192242.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/751/DOC021751659.jpg)
![](https://static.chipdip.ru/lib/166/DOC004166247.jpg)
![](https://static.chipdip.ru/lib/068/DOC006068732.jpg)
![](https://static.chipdip.ru/lib/614/DOC007614548.jpg)
![](https://static.chipdip.ru/lib/254/DOC021254666.jpg)
![](https://static.chipdip.ru/lib/077/DOC036077300.jpg)
1 940 ֏
от 2 шт. —
1 500 ֏
от 5 шт. —
1 150 ֏
от 10 шт. —
1 040 ֏
1 шт.
на сумму 1 940 ֏
Альтернативные предложения1
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 500В, 1,6А, 50Вт, TO220AB Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 2.5A(Tc) |
Drain to Source Voltage (Vdss) | 500V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 25V |
Manufacturer | Vishay Siliconix |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-220-3 |
Packaging | Tube |
Part Status | Active |
Power Dissipation (Max) | 50W(Tc) |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.5A, 10V |
Series | - |
Supplier Device Package | TO-220AB |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±30V |
Vgs(th) (Max) @ Id | 4.5V @ 250ВµA |
Base Product Number | IRF820 -> |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf |
Package | Tube |
RoHS Status | ROHS3 Compliant |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Through Hole |
Maximum Continuous Drain Current (A) | 2.5 |
Maximum Drain Source Resistance (mOhm) | 3000 10V |
Maximum Drain Source Voltage (V) | 500 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 50000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | TO-220 |
Supplier Package | TO-220AB |
Tab | Tab |
Typical Fall Time (ns) | 13 |
Typical Gate Charge @ 10V (nC) | 17(Max) |
Typical Gate Charge @ Vgs (nC) | 17(Max)10V |
Typical Input Capacitance @ Vds (pF) | 340 25V |
Typical Rise Time (ns) | 12 |
Typical Turn-Off Delay Time (ns) | 16 |
Typical Turn-On Delay Time (ns) | 8.1 |
Maximum Continuous Drain Current | 2.5 A |
Maximum Drain Source Resistance | 3 Ω |
Maximum Drain Source Voltage | 500 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 50 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Package Type | TO-220AB |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 17 nC @ 10 V |
Width | 4.7mm |
Вес, г | 2.72 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 135 КБ
Datasheet IRF820APBF
pdf, 281 КБ
Datasheet IRF820APBF
pdf, 286 КБ
Datasheet IRF820APBF
pdf, 156 КБ
Документация
pdf, 278 КБ