IRF820PBF, Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-220AB
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
405 ֏
Мин. кол-во для заказа 390 шт.
от 719 шт. —
392 ֏
от 2035 шт. —
378 ֏
Добавить в корзину 390 шт.
на сумму 157 950 ֏
Альтернативные предложения1
Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Описание Транзистор N-MOSFET, полевой, 500В, 1,6А, 50Вт, TO220AB
Технические параметры
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.10.00.80 |
| Product Category | Power MOSFET |
| Process Technology | TrenchFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 2.5 |
| Maximum Drain Source Resistance (mOhm) | 3000@10V |
| Typical Gate Charge @ Vgs (nC) | 24(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 24(Max) |
| Typical Input Capacitance @ Vds (pF) | 360@25V |
| Maximum Power Dissipation (mW) | 50000 |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 8.6 |
| Typical Turn-Off Delay Time (ns) | 33 |
| Typical Turn-On Delay Time (ns) | 8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Pin Count | 3 |
| Supplier Package | TO-220AB |
| Standard Package Name | TO-220 |
| Military | No |
| Mounting | Through Hole |
| Package Height | 9.01(Max) |
| Package Length | 10.41(Max) |
| Package Width | 4.7(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Lead Shape | Through Hole |
| Base Product Number | IRF820 -> |
| Current - Continuous Drain (Id) @ 25В°C | 2.5A (Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| FET Feature | - |
| Manufacturer | Vishay Siliconix |
| Packaging | Tube |
| Series | - |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Resistance | 3 Ω |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 50 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-220AB |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V |
| Width | 4.7mm |
| Вес, кг | 21.3 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 131 КБ
Datasheet
pdf, 271 КБ
Datasheet IRF820PBF
pdf, 269 КБ
IRF820 Datasheet
pdf, 169 КБ
Документация
pdf, 275 КБ
Datasheet IRF820
pdf, 150 КБ
